Breakdown transients in ultrathin gate oxides: transition in the degradation rate

S Lombardo; J H Stathis; B P Linder

doi:10.1103/PhysRevLett.90.167601

Breakdown transients in ultrathin gate oxides: transition in the degradation rate

Phys Rev Lett. 2003 Apr 25;90(16):167601. doi: 10.1103/PhysRevLett.90.167601. Epub 2003 Apr 22.

Authors

S Lombardo¹, J H Stathis, B P Linder

Affiliation

¹ Consiglio Nazionale delle Ricerche (CNR)-Istituto per la Microelettronica e Microsistemi (IMM), Sezione di Catania, Stradale Primosole, 50, 95121 Catania, Italy.

PMID: 12732008
DOI: 10.1103/PhysRevLett.90.167601

Abstract

We report a sharp threshold at 4 V in the growth rate of breakdown spots in thin films of SiO2 on silicon. This provides some of the first information concerning the electronic structure of the breakdown spot.