The extreme technological complexity associated with continued dimensional scaling of the photolithographic patterning process to sub-50 nm dimensions has forced the semiconductor industry to seek increasingly innovative alternative approaches. One unconventional method under preliminary consideration involves using self-assembling block copolymer films as high-resolution patterning materials for defining integrated circuit (IC) elements. While these materials are attractive because of their ability to define nanometer-scale dimensions, their ultimate utility as a viable patterning method remains in question because of issues relating to pattern roughness and defectivity. In this issue, Prof. Paul Nealey and co-workers at the University of Wisconsin present compelling first demonstrations of experimental methods by which polymer self-assembly can generate the pattern elements essential for IC fabrication.