Abstract
True n-type doping of titanium oxide without formation of midgap states would expand the use of metal oxides for charge-based devices. We demonstrate that plasma-assisted fluorine insertion passivates defect states and that fluorine acts as an n-type donor in titanium oxide. This enabled us to modify the Fermi level and transport properties of titanium oxide outside the limits of O vacancy doping. The origin of the electronic structure modification is explained by ab initio calculation.
Publication types
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Research Support, U.S. Gov't, Non-P.H.S.
MeSH terms
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Computer Simulation
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Crystallization / methods*
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Fluorine / chemistry*
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Gases / chemistry
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Hot Temperature
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Macromolecular Substances / chemistry
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Materials Testing
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Models, Chemical*
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Molecular Conformation
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Nanostructures / chemistry*
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Nanostructures / ultrastructure*
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Nanotechnology / methods*
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Particle Size
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Semiconductors
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Surface Properties
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Titanium / chemistry*
Substances
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Gases
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Macromolecular Substances
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titanium dioxide
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Fluorine
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Titanium