High-performance non-volatile organic ferroelectric memory on banknotes

M A Khan; Unnat S Bhansali; H N Alshareef

doi:10.1002/adma.201200626

High-performance non-volatile organic ferroelectric memory on banknotes

Adv Mater. 2012 Apr 24;24(16):2165-70. doi: 10.1002/adma.201200626. Epub 2012 Mar 21.

Authors

M A Khan¹, Unnat S Bhansali, H N Alshareef

Affiliation

¹ King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.

PMID: 22438135
DOI: 10.1002/adma.201200626

Abstract

High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electricity*
Fraud / prevention & control
Polymers / chemistry
Printing / methods*
Transistors, Electronic*

Substances

Polymers