A light-controlled resistive switching memory

Adv Mater. 2012 May 8;24(18):2496-500. doi: 10.1002/adma.201200382. Epub 2012 Apr 10.

Abstract

Sketch of the configuration of a light-controlled resistive switching memory. Light enters through the Al(2) O(3) uncovered surface and reaches the optically active p-Si substrate, where carriers are photogenerated and subsequently injected in the Al(2) O(3) layer when a suitable voltage pulse is applied. The resistance of the Al(2) O(3) can be switched between different non-volatile states, depending on the applied voltage pulse and on the illumination conditions.

Publication types

  • Research Support, Non-U.S. Gov't

MeSH terms

  • Aluminum Oxide / chemistry
  • Light*
  • Semiconductors*
  • Silicon / chemistry
  • Silicon Dioxide / chemistry

Substances

  • Silicon Dioxide
  • Aluminum Oxide
  • Silicon