Graphene/metal contacts: bistable states and novel memory devices

Xiaomu Wang; Weiguang Xie; Jun Du; Chengliang Wang; Ni Zhao; Jian-Bin Xu

doi:10.1002/adma.201104574

Graphene/metal contacts: bistable states and novel memory devices

Adv Mater. 2012 May 15;24(19):2614-9. doi: 10.1002/adma.201104574. Epub 2012 Apr 10.

Authors

Xiaomu Wang¹, Weiguang Xie, Jun Du, Chengliang Wang, Ni Zhao, Jian-Bin Xu

Affiliation

¹ Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China.

PMID: 22488980
DOI: 10.1002/adma.201104574

Abstract

Graphene field-effect transistors (GFETs) with different metal electrodes are fabricated to explore the contact characteristics. The contact resistance and the spatial potential distribution along the graphene/metal interface are investigated. The low-doped graphene/metal contact can be reversibly switched between "ohmic" and "space-charge region limited" states. The observed switching attributes are highly reproducible and stable, which provides a new avenue to produce high-performance graphene memory devices.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electrodes
Graphite / chemistry*
Metals / chemistry*
Semiconductors*
Silicon Dioxide / chemistry

Substances

Metals
Silicon Dioxide
Graphite