Highly air-stable phosphorus-doped n-type graphene field-effect transistors

Surajit Some; Jangah Kim; Keunsik Lee; Atul Kulkarni; Yeoheung Yoon; Saemi Lee; Taesung Kim; Hyoyoung Lee

doi:10.1002/adma.201202255

Highly air-stable phosphorus-doped n-type graphene field-effect transistors

Adv Mater. 2012 Oct 23;24(40):5481-6. doi: 10.1002/adma.201202255. Epub 2012 Aug 7.

Authors

Surajit Some¹, Jangah Kim, Keunsik Lee, Atul Kulkarni, Yeoheung Yoon, Saemi Lee, Taesung Kim, Hyoyoung Lee

Affiliation

¹ NCRI, Center for Smart Molecular Memory, Department of Chemistry, Samsung-SKKU Graphene Center, Sungkyunkwan University, Suwon 440-746, Republic of Korea.

PMID: 22886822
DOI: 10.1002/adma.201202255

Abstract

Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Graphite / chemistry*
Hot Temperature
Nitrogen / chemistry
Oxygen / chemistry
Phosphorus / chemistry*
Silicon Dioxide / chemistry
Transistors, Electronic*

Substances

Phosphorus
Silicon Dioxide
Graphite
Nitrogen
Oxygen