Anti-solvent derived non-stacked reduced graphene oxide for high performance supercapacitors

Yeoheung Yoon; Keunsik Lee; Chul Baik; Heejoun Yoo; Misook Min; Younghun Park; Sae Mi Lee; Hyoyoung Lee

doi:10.1002/adma.201301230

Anti-solvent derived non-stacked reduced graphene oxide for high performance supercapacitors

Adv Mater. 2013 Aug 27;25(32):4437-44. doi: 10.1002/adma.201301230. Epub 2013 Jun 21.

Authors

Yeoheung Yoon¹, Keunsik Lee, Chul Baik, Heejoun Yoo, Misook Min, Younghun Park, Sae Mi Lee, Hyoyoung Lee

Affiliation

¹ NCRI, Center for Smart Molecular Memory, Department of Energy Science, Department of Chemistry, Sungkyunkwan University, Suwon, Republic of Korea.

PMID: 23788264
DOI: 10.1002/adma.201301230

Abstract

An anti-solvent for graphene oxide (GO), hexane, is introduced to increase the surface area and the pore volume of the non-stacked GO/reduced GO 3D structure and allows the formation of a highly crumpled non-stacked GO powder, which clearly shows ideal supercapacitor behavior.

Keywords: anti-solvents; high porosity; non-stacked graphene oxide; supercapacitor.

Publication types

Research Support, Non-U.S. Gov't