Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition

Soong Ju Oh; Nathaniel E Berry; Ji-Hyuk Choi; E Ashley Gaulding; Hangfei Lin; Taejong Paik; Benjamin T Diroll; Shin Muramoto; Christopher B Murray; Cherie R Kagan

doi:10.1021/nl404818z

Designing high-performance PbS and PbSe nanocrystal electronic devices through stepwise, post-synthesis, colloidal atomic layer deposition

Nano Lett. 2014 Mar 12;14(3):1559-66. doi: 10.1021/nl404818z. Epub 2014 Feb 10.

Authors

Soong Ju Oh¹, Nathaniel E Berry, Ji-Hyuk Choi, E Ashley Gaulding, Hangfei Lin, Taejong Paik, Benjamin T Diroll, Shin Muramoto, Christopher B Murray, Cherie R Kagan

Affiliation

¹ Department of Materials Science and Engineering, ‡Department of Electrical and Systems Engineering, §Department of Chemistry, University of Pennsylvania , Philadelphia, Pennsylvania 19104, United States.

PMID: 24499242
DOI: 10.1021/nl404818z

Abstract

We report a simple, solution-based, postsynthetic colloidal, atomic layer deposition (PS-cALD) process to engineer stepwise the surface stoichiometry and therefore the electronic properties of lead chalcogenide nanocrystal (NC) thin films integrated in devices. We found that unlike chalcogen-enriched NC surfaces that are structurally, optically, and electronically unstable, lead chloride treatment creates a well-passivated shell that stabilizes the NCs. Using PS-cALD of lead chalcogenide NC thin films we demonstrate high electron field-effect mobilities of ∼4.5 cm(2)/(V s).

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.