High-mobility field-effect transistors fabricated with macroscopic aligned semiconducting polymers

Hsin-Rong Tseng; Hung Phan; Chan Luo; Ming Wang; Louis A Perez; Shrayesh N Patel; Lei Ying; Edward J Kramer; Thuc-Quyen Nguyen; Guillermo C Bazan; Alan J Heeger

doi:10.1002/adma.201305084

High-mobility field-effect transistors fabricated with macroscopic aligned semiconducting polymers

Adv Mater. 2014 May 21;26(19):2993-8. doi: 10.1002/adma.201305084. Epub 2014 Feb 6.

Authors

Hsin-Rong Tseng¹, Hung Phan, Chan Luo, Ming Wang, Louis A Perez, Shrayesh N Patel, Lei Ying, Edward J Kramer, Thuc-Quyen Nguyen, Guillermo C Bazan, Alan J Heeger

Affiliation

¹ Center for Polymer and Organic Solids, Mitsubishi Chemical Center for Advanced Materials, University of California, Santa Barbara, Santa Barbara, CA, 93106, United States.

PMID: 24504475
DOI: 10.1002/adma.201305084

Abstract

A record high OFET hole mobility, as high as 23.7 cm(2) /Vs, is achieved in macroscopic aligned semiconducting polymers. The high mobility is insensitive to the polymer molecular weight. Polymer chains are aligned along the fiber to facilitate intrachain charge transport.

Keywords: conjugated polymer; fiber alignment; high mobility; intrachain charge transport; organic field-effect transistor.

Publication types

Research Support, Non-U.S. Gov't
Research Support, U.S. Gov't, Non-P.H.S.