Effect of wettability on the agglomeration of silicon nanowire arrays fabricated by metal-assisted chemical etching

Langmuir. 2014 Sep 2;30(34):10290-8. doi: 10.1021/la501768f. Epub 2014 Aug 20.

Abstract

The effect of wettability on the undesirable bundling of silicon nanowire (SiNW) arrays fabricated by metal-assisted chemical etching (MACE) method is investigated. This paper reports a simple and low-cost approach to achieve dense SiNW arrays with excellent lateral separation. A hydrophilic pretreatment on the initial wafer substrate prior to the etching procedure, followed by a hydrophobic post-treatment of the fabricated SiNWs, allows the fabrication of large and dense arrays of SiNWs with no agglomeration. These results are discussed within the framework of the detailed balance of forces acting on the nanowires.