One of the fundamental issues with graphene for logic applications is its lack of a band gap. In this issue of ACS Nano, Shim and colleagues introduce an effective approach for modulating the current flow in graphene by forming p-n junctions using lasers. The findings could lead to a new route for controlling the electronic properties of graphene-based devices. We highlight recent progress in the direct laser synthesis and patterning of graphene for numerous applications. We also discuss the challenges and opportunities in translating this remarkable progress toward the direct laser writing of graphene electronics at large scales.