The effect of ALD-Zno layers on the formation of CH₃NH₃PbI₃ with different perovskite precursors and sintering temperatures

Xu Dong; Hongwei Hu; Bencai Lin; Jianning Ding; Ningyi Yuan

doi:10.1039/c4cc04685d

The effect of ALD-Zno layers on the formation of CH₃NH₃PbI₃ with different perovskite precursors and sintering temperatures

Chem Commun (Camb). 2014 Nov 28;50(92):14405-8. doi: 10.1039/c4cc04685d.

Authors

Xu Dong¹, Hongwei Hu, Bencai Lin, Jianning Ding, Ningyi Yuan

Affiliation

¹ Center for Low-Dimensional Materials, Micro-Nano Devices and Systems, Changzhou University, Changzhou, Jiangsu 213164, China. nyyuan@cczu.edu.cn.

PMID: 25302343
DOI: 10.1039/c4cc04685d

Abstract

ZnO films deposited by atomic layer deposition at 70 °C were used to fabricate perovskite solar cells, and a conversion efficiency of 13.1% was obtained. On the ZnO layer, CH3NH3PbI3 was formed at room temperature using CH3NH3I and PbCl2 precursors, which is in contrast to the reported results.