Heterogeneous lasers and coupling to Si₃N₄ near 1060 nm

Opt Lett. 2014 Oct 15;39(20):6017-20. doi: 10.1364/OL.39.006017.

Abstract

A III-V/Si₃N₄ platform on silicon is presented capable of broad-spectral performance with initial heterogeneous lasers near 1060 nm. Continuous wave Fabry-Perot laser results for heterogeneous InGaAs/GaAs multiple quantum well (MQW) laser with output power approaching 0.25 mW on Si is demonstrated. Taper transmission loss measurements from III-V to Si₃N₄ are measured to be 2.5±0.75 dB.