We investigate THz absorption properties of graphene-based heterostructures by using characteristics matrix method based on conductivity. We demonstrate that the proposed structure can lead to perfect THz absorption because of strong photon localization in the defect layer of the heterostructure. The THz absorption may be tuned continuously from 0 to 100% by controlling the chemical potential through a gate voltage. By adjusting the incident angle or the period number of the two PCs with respect to the graphene layer, one can tailor the maximum THz absorption value. The position of the THz absorption peaks can be tuned by changing either the center wavelength or the thicknesses ratio of the layers constituting the heterostructure. Our proposal may have potentially important applications in optoelectronic devices.