SEM and Raman analysis of graphene on SiC(0001)

K Grodecki; I Jozwik; J M Baranowski; D Teklinska; W Strupinski

doi:10.1016/j.micron.2015.05.013

SEM and Raman analysis of graphene on SiC(0001)

Micron. 2016 Jan:80:20-3. doi: 10.1016/j.micron.2015.05.013. Epub 2015 Sep 4.

Authors

K Grodecki¹, I Jozwik², J M Baranowski³, D Teklinska², W Strupinski²

Affiliations

¹ Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland. Electronic address: Kacper.grodecki@itme.edu.pl.
² Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland.
³ Institute of Electronic Materials Technology, 133 Wolczynska Str., 01-919 Warsaw, Poland; Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland.

PMID: 26409439
DOI: 10.1016/j.micron.2015.05.013

Abstract

Graphene grown by a sublimation technique was studied by Scanning Electron Microscopy (SEM) and micro-Raman spectroscopy. The measurement area of a sample was marked and investigated using both systems, as a result of which SEM images were directly compared with Raman maps. In this work we show that a correlative analysis of Energy Selective Backscattered electrons detector (EsB), In-Lens figures and Raman maps of shape and intensity of the 2D band is adequate to determine graphene layer thickness with the precision of SEM and reliability of Raman spectroscopy.

Keywords: Epitaxial graphene; Raman spectroscopy; Scanning Electron Microscopy.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Graphite / analysis*
Microscopy, Electron, Scanning / methods*
Nanostructures / chemistry*
Nanostructures / ultrastructure*
Spectrum Analysis, Raman / methods*

Substances

Graphite