P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

Xiaochi Liu; Deshun Qu; Jungjin Ryu; Faisal Ahmed; Zheng Yang; Daeyeong Lee; Won Jong Yoo

doi:10.1002/adma.201505154

P-Type Polar Transition of Chemically Doped Multilayer MoS2 Transistor

Adv Mater. 2016 Mar 23;28(12):2345-51. doi: 10.1002/adma.201505154. Epub 2016 Jan 25.

Authors

Xiaochi Liu¹, Deshun Qu¹, Jungjin Ryu¹, Faisal Ahmed¹, Zheng Yang¹, Daeyeong Lee¹, Won Jong Yoo¹

Affiliation

¹ Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, SKKU Advanced Institute of Nano-Technology (SAINT), School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-ro, Jangangu, Suwon, Gyeonggi-do, 440-746, Korea.

PMID: 26808483
DOI: 10.1002/adma.201505154

Abstract

A high-performance multilayer MoS2 p-type field-effect transistor is realized via controllable chemical doping, which shows an excellent on/off ratio of 10(9) and a maximum hole mobility of 132 cm(2) V(-1) s(-1) at 133 K. The developed technique will enable 2D materials to be used for future high-efficiency and low-power semiconductor device applications.

Keywords: MoS2; chemical doping; contact resistance; p-type; transistors.