50-Fold EQE Improvement up to 6.27% of Solution-Processed All-Inorganic Perovskite CsPbBr3 QLEDs via Surface Ligand Density Control

Jianhai Li; Leimeng Xu; Tao Wang; Jizhong Song; Jiawei Chen; Jie Xue; Yuhui Dong; Bo Cai; Qingsong Shan; Boning Han; Haibo Zeng

doi:10.1002/adma.201603885

50-Fold EQE Improvement up to 6.27% of Solution-Processed All-Inorganic Perovskite CsPbBr₃ QLEDs via Surface Ligand Density Control

Adv Mater. 2017 Feb;29(5). doi: 10.1002/adma.201603885. Epub 2016 Nov 24.

Authors

Jianhai Li¹, Leimeng Xu¹, Tao Wang¹, Jizhong Song¹, Jiawei Chen¹, Jie Xue¹, Yuhui Dong¹, Bo Cai¹, Qingsong Shan¹, Boning Han¹, Haibo Zeng¹

Affiliation

¹ Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.

PMID: 27882606
DOI: 10.1002/adma.201603885

Abstract

Solution-processed CsPbBr₃ quantum-dot light-emitting diodes with a 50-fold external quantum efficiency improvement (up to 6.27%) are achieved through balancing surface passivation and carrier injection via ligand density control (treating with hexane/ethyl acetate mixed solvent), which induces the coexistence of high levels of ink stability, photoluminescence quantum yields, thin-film uniformity, and carrier-injection efficiency.

Keywords: all-inorganic perovskites; cesium lead halides (CsPbX3); colloidal nanocrystals; quantum-dot light-emitting diodes (QLEDs); surface ligand density control.