Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS2

Ying Chen; Lin Gan; Huiqiao Li; Ying Ma; Tianyou Zhai

doi:10.1002/adma.201603550

Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS₂

Adv Mater. 2017 Feb;29(7). doi: 10.1002/adma.201603550. Epub 2016 Dec 14.

Authors

Ying Chen¹, Lin Gan¹, Huiqiao Li¹, Ying Ma¹, Tianyou Zhai¹

Affiliation

¹ State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.

PMID: 27966226
DOI: 10.1002/adma.201603550

Abstract

A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large-size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS₂ film up to 1 cm² . The novel strategy is also verified for the synthesis of WSe₂ and MoS₂ uniform films, suggesting universality for TMD film fabrication.

Keywords: chemical vapor deposition; silanization; uniform films.