The spectacular success of silicon-based photonic integrated circuits (PICs) in the past decade naturally begs the question of whether similar fabrication procedures can be applied to other material platforms with more desirable optical properties. In this work, we demonstrate the individual passive components (grating couplers, waveguides, multi-mode interferometers and ring resonators) necessary for building large scale integrated circuits in suspended gallium arsenide (GaAs). Implementing PICs in suspended GaAs is a viable route towards achieving optimal system performance in areas with stringent device constraints like energy efficient transceivers for exascale systems, integrated electro-optic comb lasers, integrated quantum photonics, cryogenic photonics and electromechanical guided wave acousto-optics.