Emission tuning of highly efficient quaternary Ag-Cu-Ga-Se/ZnSe quantum dots for white light-emitting diodes

Jinxin Wei; Zhe Hu; Wenjie Zhou; Yi Qiu; Hanqing Dai; Yuanyuan Chen; Zhongjie Cui; Siyu Liu; Haiyang He; Wanlu Zhang; Fengxian Xie; Ruiqian Guo

doi:10.1016/j.jcis.2021.05.110

Emission tuning of highly efficient quaternary Ag-Cu-Ga-Se/ZnSe quantum dots for white light-emitting diodes

J Colloid Interface Sci. 2021 Nov 15:602:307-315. doi: 10.1016/j.jcis.2021.05.110. Epub 2021 May 23.

Authors

Jinxin Wei¹, Zhe Hu¹, Wenjie Zhou¹, Yi Qiu¹, Hanqing Dai², Yuanyuan Chen¹, Zhongjie Cui¹, Siyu Liu², Haiyang He¹, Wanlu Zhang³, Fengxian Xie⁴, Ruiqian Guo⁵

Affiliations

¹ Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
² Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai 200433, China.
³ Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China. Electronic address: fdwlzhang@fudan.edu.cn.
⁴ Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China. Electronic address: xiefengxian@fudan.edu.cn.
⁵ Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China; Institute of Future Lighting, Academy for Engineering and Technology, Fudan University, Shanghai 200433, China; Zhongshan - Fudan Joint Innovation Center, Zhongshan 528437, China. Electronic address: rqguo@fudan.edu.cn.

PMID: 34130177
DOI: 10.1016/j.jcis.2021.05.110

Abstract

With the blooming development of zero-dimensional nanomaterials, I-III-VI alloying quantum dots (QDs) with outstanding photoelectrical properties have emerged to attract much attention as promising environmentally-friendly substitutions for conventional binary Cd-based QDs. In this work, a facile one-pot method was introduced to synthesize unreported quaternary Ag-Cu-Ga-Se/ZnSe (ACGSe/ZnSe) QDs. A relatively high photoluminescence quantum yield (PL QY) of 71.9% and a tunable emission from 510 to 620 nm were successfully achieved. We explored the roles of alloying compositions in ACGSe/ZnSe QDs, inferring that increased Ag proportion would not only lower the V_defect level which leads to the blue shift of emission, but also slow the ZnSe shelling process owing to the larger lattice distortion. At last, the white light-emitting diodes (WLEDs) were fabricated with ACGSe/ZnSe QDs as the conversion layer, indicating that the as-prepared QDs are a promising candidate for further applications.

Keywords: Ag-Cu-Ga-Se/ZnSe; I−III−VI; Photoluminescence; Quantum dots; Tunable emission; WLEDs.